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Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
1.5max.
1.1max.
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 200 150 6 2.5 1 0.1 40 1.3 150 –55 to +150 Unit V V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.
2SD1258 Datasheet
