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2SD1251A - Silicon NPN Transistor

Download the 2SD1251A datasheet PDF. This datasheet also covers the 2SD1251 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction tempe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD1251_Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1251A Silicon NPN triple diffusion Transistor Panasonic Semiconductor
2SD1251 Silicon NPN triple diffusion Transistor Panasonic Semiconductor
2SD1250 Silicon NPN epitaxial planar type Power Transistor Panasonic Semiconductor
2SD1250A Silicon NPN triple diffusion planar type Power Transistor Panasonic Semiconductor
2SD1252 Silicon NPN triple diffusion Transistor Panasonic Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SD1251 Silicon NPN Transistor
2SD1250 Silicon NPN Transistor
2SD1252 Silicon NPN Transistor
2SD1252A Silicon NPN Transistor
2SD1253 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP IB PC VCEO Symbol VCBO Rating 60 80 60 80 8 4 6 1 1.