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2SD1252A - Silicon NPN Transistor

Download the 2SD1252A datasheet PDF. This datasheet also covers the 2SD1252 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power transistors. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1252 2SD1252A Collector-emitter voltage 2SD1252 2SD1252A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperatur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD1252_Kexin.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Power transistors. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1252 2SD1252A Collector-emitter voltage 2SD1252 2SD1252A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP PC VCEO Symbol VCBO Rating 60 80 60 80 6 3 5 1.3 35 150 -55 to +150 Unit V V V V V A A W W 3 .8 0 www.kexin.com.