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Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
s Features
q q q
1.5±0.1
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 200 200 150 180 6 3 2 30 1.3 150 –55 to +150 Unit V
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.