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2SD1250 - Silicon NPN epitaxial planar type Power Transistor

Key Features

  • q q q 1.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 30 1.3 150.
  • 55 to +150 Unit V 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD12.

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Datasheet Details

Part number 2SD1250
Manufacturer Panasonic
File Size 48.91 KB
Description Silicon NPN epitaxial planar type Power Transistor
Datasheet download datasheet 2SD1250 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 10.0±0.3 s Features q q q 1.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 30 1.3 150 –55 to +150 Unit V 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.