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Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 6 5 3 35 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1252 2SD1252A 2SD1252 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.
2SD1252 Datasheet
