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NVJS4151P
MOSFET – Power, Single P-Channel, Trench, SC-88
-20 V, -4.1 A
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Current (Note 1)
Steady TA = 25 °C
ID
State
TA = 85 °C
−3.2
A
−2.3
t ≤ 5 s TA = 25 °C
−4.
NVJS4151P Datasheet
