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NTJS3151P, NVJS3151P
MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88
12 V, 3.3 A
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) • Gate Diodes for ESD Protection • NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V(BR)DSS −12 V
D D
www.onsemi.com
RDS(on) Typ 45 mW @ −4.5 V 67 mW @ −2.5 V
133 mW @ −1.8 V
ID Max −3.
NVJS3151P Datasheet
