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MOSFET – Power, Dual, N-Channel With ESD Protection, SC-88
60 V, 295 mA
NTJD5121N, NVJD5121N
Features
• Low RDS(on) • Low Gate Threshold • Low Input Capacitance • ESD Protected Gate • NVJD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This is a Pb−Free Device
Applications
• Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25°C State
TA = 85°C t ≤ 5 s TA = 25°C
TA = 85°C Steady TA = 25°C State
VDSS VGS ID
PD
60
V
±20
V
295 mA
212
304
219
250 mW
t≤5s
266
Pulsed Drain C
NVJD5121N Datasheet
