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NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Power Switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Based on RqJA)
Power Dissipation (Based on RqJA)
Continuous Drain Current (Based on RqJL)
Power Dissipation (Based on RqJL)
Pulsed Drain Current
Steady TA = 25°C State
TA = 85°C Steady TA
NVJD4401N Datasheet
