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NTJD4152P, NVJD4152P
MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88
20 V, 0.88 A
Features
• Leading Trench Technology for Low RDS(ON) Performance • Small Footprint Package (SC70−6 Equivalent) • ESD Protected Gate • NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
Applications
• Load/Power Management • Charging Circuits • Load Switching • Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
−0.88 A −0.
NVJD4152P Datasheet
