FDS6699S Datasheet N-Channel MOSFET

Manufacturer: onsemi

Datasheet Details

The FDS6699S is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.

SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General.

21 A, 30 V.
Max RDS(on) = 3.6 mW at VGS = 10 V.
Max RDS(on) = 4.5 mW at VGS = 4.5 V.
Includes SyncFET Schottky Body Diode.
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
High Power and Current Handling Capability.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant.

Brand Logo	Part Number	Description	Manufacturer
	FDS6699S	MOSFET	Fairchild Semiconductor