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FDS6699S - MOSFET

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General Description

The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Overview

FDS6699S 30V N-Channel PowerTrench® SyncFET™ FDS6699S 30V N-Channel PowerTrench® SyncFET™ December.

Key Features

  • 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode.
  • High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability.
  • 100% RG (Gate Resistance) tested.

📁 Similar Datasheet

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ON Semiconductor Logo FDS6699S N-Channel MOSFET ON Semiconductor

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