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FDS6690S - 30V N-Channel PowerTrench SyncFET

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General Description

The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Overview

FDS6690S May 2000 PRELIMINARY FDS6690S 30V N -Channel PowerTrench®.

Key Features

  • 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V.
  • Includes SyncFET Schottky diode.
  • Low gate charge (11 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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