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FDS6690AS - 30V N-Channel PowerTrench SyncFET

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General Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Overview

FDS6690AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6690AS 30V N-Channel PowerTrench®.

Key Features

  • 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDS6690AS N-Channel MOSFET ON Semiconductor
ON Semiconductor Logo FDS6690A N-Channel MOSFET ON Semiconductor

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