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BLW898 - UHF linear power transistor

Description

NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap.

The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V.

Features

  • Internal input matching for wideband operation and high power gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor FEATURES • Internal input matching for wideband operation and high power gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V.
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