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BLW83 - HF/VHF power transistor

Description

N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f.

and v.h.f.

bands, with a nominal supply voltage of 28 V.

Features

  • es A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product speciļ¬cation August 1986 Philips Semiconductors Product speciļ¬cation HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW83 QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b.
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