Datasheet4U Logo Datasheet4U.com

BLW80 - UHF power transistor

Description

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f.

and v.h.f.

range for nominal supply voltages up to 13,5 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI
BLW86 NPN SILICON RF POWER TRANSISTOR ASI
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW34 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW81 UHF power transistor
BLW83 HF/VHF power transistor
BLW85 HF/VHF power transistor
BLW86 HF/VHF power transistor
BLW87 VHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. BLW80 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 4 4 > Gp dB 8,0 > typ. 15,0 η % 60 typ.
Published: |