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BLW31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability
PACKAGE STYLE .380 4L STUD
.112x45° A
B
C E
ØC
FEATURES:
• Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System
E B
H I J
D
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.4 °C/W
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.
BLW31 Datasheet
