Datasheet4U Logo Datasheet4U.com

BLW34 - UHF linear power transistor

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f.

amplifiers for television transmitters and transposers.

The excellent d.c.

Features

  • .381 α 90°.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW34 NPN SILICON RF POWER TRANSISTOR ASI
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW75 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW30 VHF power transistor
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW29 VHF power transistor
BLW50F HF/VHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1⁄4" capstan envelope with ceramic cap. BLW34 QUICK REFERENCE DATA R.F.
Published: |