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BLW29 - VHF power transistor

Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V.

Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f.

Features

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Other Datasheets by NXP Semiconductors

Part Number Description
BLW30 VHF power transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor Product speciļ¬cation August 1986 Philips Semiconductors Product speciļ¬cation VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap.
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