Datasheet4U Logo Datasheet4U.com

BLW50F - HF/VHF power transistor

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f.

and v.h.f.

band.

Features

  • tatus Objective specification Preliminar.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW34 NPN SILICON RF POWER TRANSISTOR ASI
BLW75 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW29 VHF power transistor
BLW30 VHF power transistor
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW34 UHF linear power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW50F QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) Note 1. At 65W P.E.P. PIN CONFIGURATION halfpage VCE V 45 50 f MHz 1,6 - 28 1,6 - 28 PL W 0 - 16 (P.E.P.
Published: |