Datasheet4U Logo Datasheet4U.com

BLW30 - VHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap.

It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V.

All leads are isolated from the stud.

Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Excellent reliability.
  • Withstands full load mismatch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW34 NPN SILICON RF POWER TRANSISTOR ASI
BLW75 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW34 UHF linear power transistor
BLW29 VHF power transistor
BLW50F HF/VHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLW30 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud. PINNING - SOT120 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 3 handbook, halfpage halfpage BLW30 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w.
Published: |