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BLW81 - UHF power transistor

Description

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f.

and v.h.f.

range for a nominal supply voltages up to 13,5 V.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. Product specification BLW81 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp dB η % c.w. 12,5 470 10 > 6,0 > 60 c.w. 12,5 175 10 typ. 13,5 typ.
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