Datasheet4U Logo Datasheet4U.com

BUK99E3R2-40B - N-Channel MOSFET

Download the BUK99E3R2-40B datasheet PDF. This datasheet also covers the BUK95E3R2-40B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK95E3R2-40B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BUK99E3R2-40B
Manufacturer NXP Semiconductors
File Size 331.43 KB
Description N-Channel MOSFET
Datasheet download datasheet BUK99E3R2-40B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9907-40ATC N-channel TrenchPLUS logic level FET NXP
BUK9107-40ATC N-channel TrenchPLUS logic level FET NXP
BUK9107-55ATE N-channel TrenchPLUS logic level FET NXP
BUK9120-48TC PowerMOS transistor Voltage clamped logic level FET NXP
BUK9214-30A N-Channel MOSFET NXP

Other Datasheets by NXP Semiconductors

Part Number Description
BUK99E04-40A N-Channel MOSFET
BUK9006-55A N-channel Enhancement mode field-effect power Transistor
BUK9207-30B N-Channel MOSFET
BUK9209-40B TrenchMOS logic level FET
BUK9212-55B TrenchMOS logic level FET

Full PDF Text Transcription

Click to expand full text
BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2.
Published: |