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UPA1717 - P-Channel Power MOSFET

General Description

The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.

Key Features

  • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05.
  • Low Ciss : Ciss = 830 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05.

📥 Download Datasheet

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Full PDF Text Transcription for UPA1717 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA1717. For precise diagrams, tables, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1717 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain D...

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KAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 • Low Ciss : Ciss = 830 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.