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UPA1715 - P-Channel Power MOSFET

General Description

This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

Key Features

  • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS =.
  • 10 V, ID =.
  • 6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS =.
  • 4.5 V, ID =.
  • 6.0 A) RDS(on)3 = 12.0 mΩ TYP. (VGS =.
  • 4.0 V, ID =.
  • 6.0 A).
  • Low Ciss : Ciss = 3800 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8).

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05 Min. 0.5 ±0.2 0.10 1.27 0.