Datasheet4U Logo Datasheet4U.com

UPA1716 - P-Channel Power MOSFET

General Description

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Key Features

  • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS =.
  • 10 V, ID =.
  • 4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS =.
  • 4.5 V, ID =.
  • 4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS =.
  • 4.0 V, ID =.
  • 4 A).
  • Low Ciss : Ciss = 2100 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8).

📥 Download Datasheet

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPA1715 P-Channel Power MOSFET
UPA1717 P-Channel Power MOSFET
UPA1700A SWITCHING N-CHANNEL POWER MOSFET
UPA1701A SWITCHING N-CHANNEL POWER MOSFET
UPA1703 SWITCHING N-CHANNEL POWER MOSFET
UPA1704 SWITCHING N-CHANNEL POWER MOSFET
UPA1705 N-Channel Power MOSFET
UPA1706 N-Channel Power MOSFET
UPA1707 N-Channel Power MOSFET
UPA1708 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1716 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05 Min. 0.5 ±0.2 0.10 1.27 0.78 Max. 0.40 +0.10 –0.