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UPA1700A - SWITCHING N-CHANNEL POWER MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers.

Key Features

  • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A).
  • Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10.
  • 0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 ±0.3 4.4 0.8 Ciss = 820 pF Typ.
  • Built-in G-S Protection Diode.
  • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Full PDF Text Transcription for UPA1700A (Reference)

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor ...

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USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. 8 PACKAGE DIMENSIONS (in millimeter) 5 FEATURES • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 ±0.3 4.4 0.8 Ciss = 820 pF Typ. • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.