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NCEP40ND80G - N-Channel Super Trench Power MOSFET

Description

The NCEP40ND80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =80A RDS(ON)=4.3mΩ (typical) @ VGS=10V RDS(ON)=5.5mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 PiTnoApsVsiegwnment Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P40ND80G NCEP40ND80G DFN5x6-8L Reel Size - Tape width - Quantity - Absolute Maximum R.

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Datasheet Details

Part number NCEP40ND80G
Manufacturer NCE Power Semiconductor
File Size 302.89 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40ND80G Datasheet
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http://www.ncepower.com NCEP40ND80G NCE N-Channel Super Trench Power MOSFET Description The NCEP40ND80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =80A RDS(ON)=4.3mΩ (typical) @ VGS=10V RDS(ON)=5.5mΩ (typical) @ VGS=4.
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