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NCEP4090AGU - N-Channel Enhancement Mode Power MOSFET

Description

The NCEP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

  • VDS =40V,ID =90A RDS(ON)=2.9mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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Datasheet Details

Part number NCEP4090AGU
Manufacturer NCE Power Semiconductor
File Size 379.73 KB
Description N-Channel Enhancement Mode Power MOSFET
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http://www.ncepower.com NCEP4090AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and General Features ● VDS =40V,ID =90A RDS(ON)=2.9mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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