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NCEP1580GU - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP1580GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =150V,ID =80A RDS(ON)=10.0mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP1580GU NCEP1580GU DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise note.

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Datasheet Details

Part number NCEP1580GU
Manufacturer NCE Power Semiconductor
File Size 297.47 KB
Description N-Channel Super Trench Power MOSFET
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http://www.ncepower.com NCEP1580GU NCE N-Channel Super Trench Power MOSFET Description The NCEP1580GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ●DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ●VDS =150V,ID =80A RDS(ON)=10.
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