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NCEP1570GU - N-Channel Super Trench Power MOSFET

Description

The NCEP1570GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =150V,ID =70A RDS(ON)=13mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • DC/DC Converter.
  • Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Only 100% ∆Vds TESTED! DFN 5X6 Use.
  • times Top View Bottom View Schematic Diagram eng Package Marking and Ordering Information h Device Marking Device Device Package s P15.

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Datasheet Details

Part number NCEP1570GU
Manufacturer NCE Power Semiconductor
File Size 349.10 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP1570GU Datasheet
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http://www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description The NCEP1570GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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