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NCEP048NH150T - N-Channel Super Trench III Power MOSFET

Datasheet Summary

Description

The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-247-3L Schematic Diagram Package Marking and Ordering Information Device Marking Device NCEP048NH150T NCEP048NH150T Device Package TO-247-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwis.

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Datasheet Details

Part number NCEP048NH150T
Manufacturer NCE Power Semiconductor
File Size 800.40 KB
Description N-Channel Super Trench III Power MOSFET
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http://www.ncepower.com NCEP048NH150T NCE N-Channel Super Trench III Power MOSFET Description The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.
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