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NCEP040NH150LL - N-Channel Super Trench III Power MOSFET

Datasheet Summary

Description

The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =150V,ID =265A RDS(ON)=3.2mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device NCEP040NH150LL NCEP040NH150LL Device Package TOLL Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Vol.

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Datasheet Details

Part number NCEP040NH150LL
Manufacturer NCE Power Semiconductor
File Size 757.07 KB
Description N-Channel Super Trench III Power MOSFET
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http://www.ncepower.com NCEP040NH150LL NCE N-Channel Super Trench III Power MOSFET Description The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =150V,ID =265A RDS(ON)=3.
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