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NCE6602 - N & P-Channel Enhancement Mode Power MOSFET

Description

The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • N-Channel.
  • VDS = 30V,ID = 3.5A RDS(ON).

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Datasheet Details

Part number NCE6602
Manufacturer NCE Power Semiconductor
File Size 436.96 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6602 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE6602 NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel ● VDS = 30V,ID = 3.5A RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.
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