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2N918 - NPN SILICON ANNULAR TRANSISTORS

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2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 (TO-72 (TO-206AF) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO v CBO vEBO 'C PD Pd TJ. Tstg Value 15 30 3.0 50 200 1.14 300 1.71 -65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 1.
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