Datasheet4U Logo Datasheet4U.com

2N911 - NPN silicon annular transistors

Download the 2N911 datasheet PDF. This datasheet also covers the 2N910 variant, as both devices belong to the same npn silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N910-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

Click to expand full text
2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) = ELECTRICAL CHARACTERISTICS (T.
Published: |