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2N910 (SILICON) 2N911
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO-18)
Collector connected to cIse
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage Collector-Base Voltage
VCER VCB
Emitter-Base Voltage
Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C
Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC
Derate above 25°C Operating and Storage Junction
Temperature Range
VEB
PD PD
TJ' Tstg
Value
60
eo
100
7.0
O. !5 2,86 1.8 0.975 10.3 -65 to +200
Unit
Vdc Vdc Vdc Vdc Watt mW/PC Watt
mW;oC °c
2-115
2N910, 2N911 (Continued) = ELECTRICAL CHARACTERISTICS (T.
2N910 Datasheet
