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2N929A - NPN silicon annular transistors

Download the 2N929A datasheet PDF. This datasheet also covers the 2N929 variant, as both devices belong to the same npn silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N929-Motorola.pdf) that lists specifications for multiple related part numbers.

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2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N930JAN AVAILABLE NPN silicon annular transistors for low-level, lownoise amplifier applications. CASE 22 (TO·18) Collector connected to C8se MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCEO VCB VEB IC PD PD TJ T stg 2N929 2N929A 2N930 2N930A 45 60 45 60 5.0 6.0 30 0.5 3.33 1.
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