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2N918 - NPN LOW POWER SILICON TRANSISTOR

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 2N918 2N918UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top & Tstg Note: 1) Derate linearly 1.14mW/°C above TA > 25°C Value 15 30 3.
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