LMNNBSS139T - Dual N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	LMNNBSS139T
Manufacturer	LFC semi
File Size	668.76 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	LMNNBSS139T Datasheet
Additional preview pages of the LMNNBSS139T datasheet.

Product details

Description

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.These Devices are well Suited for High Efficiency Fast Switching Applications.Applications Notebook Load Switch LED Applications Pin Configuration LMNNBSS139TX6F (SOT-363) PIN

Features

60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V.
Improved dv/dt Capability.
Fast Switching.
Green Device Available.
SOT-363 Package Design.
ESD Protected : 1500V Product.

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Published: Jul 2, 2025 |