LMN02N15TSF
Features
- 150V,1A, RDS(ON) =480mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- TSOP-6 package design
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Pin Configuration
LMN02N15TSF (TSOP-6)
Applications
- Networking
- Load Switch
- LED applications
Description
Drain
Drain
Gate
Source
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMN02N15TSF
P/N LMN02N15
Rev. 1.0
PKG Code TS
Pb Free Code F
Package TSOP-6
Quantity Reel 3000 pcs
Marking Information Part Marking 25...
