LMN1072KAF
Features
- 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
- 20V/0.65A, RDS(ON)=1000mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-723 package design
Product Description
LMN1072K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Power Management in Notebook
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
Pin Configuration
LMN1072KAF (SOT-723)
Description
Gate
Source
Drain
LMN1072K
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi....
