LMN1072KJZF
Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=700mΩ@VGS=1.8V
- 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-23 package design
Product Description
LMN1072KJZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Power Management in Notebook
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
Pin Configuration
LMN1072KJZF (SOT-23)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi....
