LMN1072KTFF
Features
- RDS(ON) = 350mΩ @VGS =4.5V
- RDS(ON) = 450mΩ @VGS =2.5V
- RDS(ON) = 700mΩ @VGS =1.8V
- RDS(ON)= 1200mΩ@VGS =1.5V
- ESD Protected
- DFN1006-3L Package design
Product Description
LMN1072 KTFF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Power Management in Notebook
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
The device is particularly suited for low voltage
Pin Configuration
LMN1072KTFF (DFN1006-3L)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMN1072KTFF LMN1072K
Rev. 1.0
Ordering Information
PKG...
