LMN1072KX7F
Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=800mΩ@VGS=1.8V
- 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-523 package design
Product Description
LMN1072 KX7F, N-Channel enhancement mode MOSFET, uses Advanced Trench
Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones, Pagers
Pin Configuration
LMN1072 KX5F (SOT-523)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change...
