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LMNN7002KY - Dual N-Channel Enhancement Mode MOSFET

General Description

The LMNN7002KY is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Key Features

  • 60V/0.5A, RDS(ON)=3.0Ω@VGS=10V.
  • 60V/0.2A, RDS(ON)=4.0Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-563 package design Product.

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Datasheet Details

Part number LMNN7002KY
Manufacturer LFC semi
File Size 714.24 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMNN7002KY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNN7002KY Rev. 1.0 LMNN7002KY Dual N-Channel Enhancement Mode MOSFET Features  60V/0.5A, RDS(ON)=3.0Ω@VGS=10V  60V/0.2A, RDS(ON)=4.0Ω@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-563 package design Product Description The LMNN7002KY is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.