LMNN3218SF
Features
- 30V, 7.3A, RDS(ON)=22mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- SOP-8 package design
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd SR
Pin Configuration
LMNN3218SF (SOP-8)
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMNN3218SF...
