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IRF7805Z - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 16 A (VGS = 10V).
  • RDS(ON) ＜ 6.8mΩ (VGS = 10V).
  • HEXFET Power MOSFET S 1 S 2 S 3 G 4 SOP-8 +0.04 0.21 -0.02 AA 8 D 7 D 6 D 5 D 1.50 0.15.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Tempera.

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SMD Type MOSFET N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) ■ Features ● VDS (V) = 30V ● ID = 16 A (VGS = 10V) ● RDS(ON) ＜ 6.8mΩ (VGS = 10V) ● HEXFET Power MOSFET S 1 S 2 S 3 G 4 SOP-8 +0.04 0.21 -0.02 AA 8 D 7 D 6 D 5 D 1.50 0.15 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM IAR EAS PD RthJA RthJC TJ Tstg Rating 30 ±20 16 12 120 12 72 2.5 1.6 50 20 150 -55 to 150 Unit V A mJ W ℃/W ℃ www.kexin.com.