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IRF730S - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) =400V.
  • ID = 5.5 A (VGS = 10V).
  • RDS(ON) ＜ 1Ω (VGS = 10V).
  • Fast switching.
  • Low thermal resistance d g s.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tc = 25℃ Tc = 100℃ Pulsed Drain Current Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy (Note.1) Tc = 25℃ Ta = 25℃ Repetitive Avalanche Energy (Note.2) Peak Diode Recovery dv/dt Thermal Resistance. Junction- to-Ambi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET IRF730S (KRF730S) MOSFET ■ Features ● VDS (V) =400V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) ＜ 1Ω (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tc = 25℃ Tc = 100℃ Pulsed Drain Current Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy (Note.1) Tc = 25℃ Ta = 25℃ Repetitive Avalanche Energy (Note.2) Peak Diode Recovery dv/dt Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Ambient (PCB mount) Thermal Resistance Junction to Mounting Base Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJB TJ Tstg Note.